The Effect of Radiation on the Electrical Properties of MOS Devices

Samples of MOS devices which were prepared by anodic oxidation method in which three electrodes used with HCl of 0.1 M. The thicknesses of SiO2 film were between 45& 80Ao . The effect of -ray on the characteristic of these devices studied through the measurements of I-V and C-V before and after irradiation. The results point to that the capacitance decreased after irradiation and an increase in the conductivity observed which indicates a decrease of potential barriers of these devices. The measurement of I-V for these samples as solar cell showed a decrease in the output power.