Modeling of Nanocrystal Storage Cells

Section: Article
Published
Apr 28, 2009
Pages
1-14

Abstract

AbstractThe computer program is prepared for applying Montecarlo simulation and modeling for single-electron nanocrystal memories. The nanocrystal memory device of (55) quantum dots is used for studying the relationship between, geometrical dimensions, electrical characteristics and charging effects for single electron static programming characteristics. The nanocrystal inter-dot effects are included. All parameters got in the memory simulation programming are studied and discussed.Keywords: Nanocrystal Memories.

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How to Cite

[1]
L. S. Ali, S. M. T. Abdul Mawjoud, and A. D. Mohammed Saleem, “Modeling of Nanocrystal Storage Cells”, AREJ, vol. 17, no. 2, pp. 1–14, Apr. 2009.