M.AL-SHEIKH, A.; عدنان; M.T.AL-HUBAITY, H.; هبة. Theoretical Model for Semiconductor System GaP: Ni2+. Rafidain Journal of Science, [S. l.], v. 19, n. 6, p. 174–181, 2025. DOI: 10.33899/rjs.2008.41434. Disponível em: https://ojs.uomosul.edu.iq/index.php/rsci/article/view/12587. Acesso em: 7 aug. 2025.