SHEET, S.; MAHMOUD, H. Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique. Journal of Education and Science (JES), [S. l.], v. 21, n. 2, p. 1–6, 2008. DOI: 10.33899/edusj.2008.51284. Disponível em: https://ojs.uomosul.edu.iq/index.php/edusj/article/view/24433. Acesso em: 7 aug. 2025.