THE MEMORIZATION BEHAVIORS OF DIFFERENT MIOS STRUCTURES

ABSTRACT: In this chapter the various kinds of charge storage cells are discussedas a result of examining many samples with different structures. The C-V, I-V and R-Vmeasurements of the structures confirm the memorization capability of MIOS devices.The examined structures reveal three kinds of memory actions. The first one is thecharge storage capability which can be shown through (C-V) curve shifting as the devicewas exposed to certain stress for a certain time. The second is the electronic switchingthat is demonstrated by the fact that the switching between ON and OFF states andback to original state can only be obtained by inverting the polarity of the applied biasvoltage. The third kind of memorization action is that the device can be switched into avariety of stable intermediate resistance states. The new resistance state is determinedby the height of the programming pulse applied to the device. This memory action isnoticed from R-V characteristic and known as a nonvolatile analogue memory behavio